The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Oct. 21, 2011
Applicants:
Peter Stauβ, Regensburg, DE;
Alexander Behres, Pfatter, DE;
Inventors:
Peter Stauβ, Regensburg, DE;
Alexander Behres, Pfatter, DE;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/26 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01L 33/26 (2013.01); H01L 21/02381 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02505 (2013.01); H01L 21/02543 (2013.01); H01L 33/0066 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0091 (2013.01); H01S 5/3201 (2013.01); H01S 2301/173 (2013.01);
Abstract
A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.