The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Feb. 17, 2012
Shunpei Yamazaki, Tokyo, JP;
Fumito Isaka, Kanagawa, JP;
Jiro Nishida, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.