The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Jun. 28, 2012
Dongming Huo, Guangdong, CN;
Hongpo HU, Guangdong, CN;
Chunlin Xie, Guangdong, CN;
Wang Zhang, Guangdong, CN;
Dongming Huo, Guangdong, CN;
Hongpo Hu, Guangdong, CN;
Chunlin Xie, Guangdong, CN;
Wang Zhang, Guangdong, CN;
BYD Company Limited, Shenzhen, Guangdong, CN;
Abstract
An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.