The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Jan. 14, 2014
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Ki Yon Park, Ansan-si, KR;
Chang Suk Han, Ansan-si, KR;
Hwa Mok Kim, Ansan-si, KR;
Hyo Shik Choi, Ansan-si, KR;
Daewoong Suh, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 31/109 (2006.01); H01L 31/0304 (2006.01); H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 31/07 (2012.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/0236 (2013.01); H01L 31/02162 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01); H01L 31/07 (2013.01);
Abstract
TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.