The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
May. 29, 2012
Hongxing Jiang, Lubbock, TX (US);
Sashikanth Majety, Lubbock, TX (US);
Rajendra Dahal, Lubbock, TX (US);
Jing LI, Lubbock, TX (US);
Jingyu Lin, Lubbock, TX (US);
Hongxing Jiang, Lubbock, TX (US);
Sashikanth Majety, Lubbock, TX (US);
Rajendra Dahal, Lubbock, TX (US);
Jing Li, Lubbock, TX (US);
Jingyu Lin, Lubbock, TX (US);
Texas Tech University System, Lubbock, TX (US);
Abstract
The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.