The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Sep. 09, 2013
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Shen Wang, Pittsford, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 9/64 (2006.01); H01L 31/02 (2006.01); H01L 23/34 (2006.01); H04N 5/335 (2011.01);
U.S. Cl.
CPC ...
H01L 31/02002 (2013.01); H01L 23/34 (2013.01); H04N 5/335 (2013.01);
Abstract

An image sensor includes a substrate having a first conductivity type. A first well in the substrate has an opposite conductivity type and is doped with opposite conductivity type dopant. A second well in the first well has the opposite conductivity type and is doped with opposite conductivity type dopant. A first region in the second well has the opposite conductivity type and is doped with opposite conductivity type dopant. A second region in the first region has the first conductivity type and is doped with first conductivity type dopant. A third region in the second well adjacent the first region is of the opposite conductivity type and is doped with opposite conductivity type dopant. A temperature sensor is disposed between, and is connected to each of, the second region and the third region.


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