The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Dec. 07, 2010
Applicants:

Mitsuhiko Ogihara, Tokyo, JP;

Hiroyuki Fujiwara, Tokyo, JP;

Takahito Suzuki, Tokyo, JP;

Masaaki Sakuta, Tokyo, JP;

Ichimatsu Abiko, Tokyo, JP;

Inventors:

Mitsuhiko Ogihara, Tokyo, JP;

Hiroyuki Fujiwara, Tokyo, JP;

Takahito Suzuki, Tokyo, JP;

Masaaki Sakuta, Tokyo, JP;

Ichimatsu Abiko, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); B41J 2/45 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); B41J 2/45 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 27/153 (2013.01); H01L 2224/2747 (2013.01); H01L 2224/27444 (2013.01); H01L 2224/291 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29113 (2013.01); H01L 2224/29114 (2013.01); H01L 2224/29117 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29164 (2013.01); H01L 2224/32502 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83011 (2013.01); H01L 2224/83013 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83825 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01018 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01058 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10336 (2013.01); H01L 2924/10349 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/157 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15788 (2013.01);
Abstract

A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.


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