The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Feb. 23, 2012
Hidehito Kitakado, Osaka, JP;
Sumio Katoh, Osaka, JP;
Hidehito Kitakado, Osaka, JP;
Sumio Katoh, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The invention provides a thin film transistor having current driving force that can be substantially improved. By heat treatment, the IGZO layer () from which oxygen is taken away by the titanium electrodes () becomes the low resistance regions (), and the IGZO layer () from which oxygen is not taken away remains as the high resistance region (). In this state, when the gate voltage is applied to the gate electrode (), electrons in the low resistance regions () near the boundaries with the high resistance region () move respectively to the titanium electrode () sides. As a result, the length of the low resistance regions () becomes short, and oppositely, the length of the high resistance region () becomes longer by the size of the shortened low resistance regions. However, the electrical channel length (Le) becomes shorter than the source/drain interval space (Lch) as the limit resolution of the exposure device, and the current driving force becomes large.