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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9093535 B1

PDFFull Text
Date of Patent:
Jul. 28, 2015

Filed:

Nov. 14, 2012

Method of planarizing substrate and method of manufacturing thin film transistor using the same

Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Hyang-Shik Kong, Seongnam-si, KR;

Seung-Bo Shim, Asan-si, KR;

Jin-Ho Ju, Seoul, KR;

Jun-Gi Kim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., , KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Reema Patel

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 21/0274 (2013.01); H01L 21/02697 (2013.01); H01L 21/32115 (2013.01); H01L 29/66765 (2013.01); H01L 29/78603 (2013.01); H01L 29/7869 (2013.01);
Abstract

A method of planarizing a substrate includes forming a conductive pattern on a first surface of a base substrate, forming a positive photoresist layer on the base substrate and the conductive pattern, exposing the positive photoresist layer to light by irradiating a second surface of the base substrate opposite to the first surface with light, developing the positive photoresist layer to form a protruded portion on the conductive pattern, forming a planarizing layer on the base substrate and the protruded portion and eliminating the protruded portion.

Find Patent Forward Citations

Kong, Hyang-Shik. (2015). Method of planarizing substrate and method of manufacturing thin film transistor using the same (U.S. Patent No. 9093535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9093535

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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