The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Nov. 13, 2006
Applicants:
Martin Knaipp, Unterpremstätten, AT;
Georg Röhrer, Graz, AT;
Inventors:
Martin Knaipp, Unterpremstätten, AT;
Georg Röhrer, Graz, AT;
Assignee:
AMS AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/0638 (2013.01); H01L 29/105 (2013.01); H01L 29/1041 (2013.01); H01L 29/7833 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01);
Abstract
A high-voltage NMOS transistor with low threshold voltage. The body doping that defines the channel region is in the form of a deep p-well. An additional shallow p-doping is arranged as a channel stopper on the transistor head. This additional shallow p-doping is produced in the semiconductor substrate at the end of the deep p-well that faces away from the channel region, and extends up to a location underneath a field oxide region that encloses the active window. The leakage current of the parasitic transistor at the transistor head is suppressed with the channel stopper.