The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Nov. 08, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Byoungkeun Son, Hwasung, KR;

Changhyun Lee, Hwasung, KR;

Jaegoo Lee, Hwasung, KR;

Kwang Soo Seol, Hwasung, KR;

Byungkwan You, Hwasung, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor substrate; and a gate insulating layer between the active pillars and the gate patterns, wherein corners of the gate patterns adjacent to the active pillars are rounded.


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