The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Sep. 10, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Beomseok Kim, Hwasung-si, KR;
Ohseong Kwon, Hwasung-si, KR;
Wandon Kim, Hwasung-si, KR;
Jaewan Chang, Hwasung-si, KR;
Kyuho Cho, Hwasung-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 28/75 (2013.01); H01L 28/91 (2013.01);
Abstract
The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.