The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Oct. 21, 2014
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventor:

Laurent-Luc Chapelon, Domene, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01); H01L 23/538 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/4853 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/49811 (2013.01); H01L 23/5386 (2013.01); H01L 24/80 (2013.01); H01L 24/81 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11912 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80141 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/81141 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/9201 (2013.01); H01L 2224/9202 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/00014 (2013.01);
Abstract

A stack of a first and second semiconductor structures is formed. Each semiconductor structure includes: a semiconductor bulk, an overlying insulating layer with metal interconnection levels, and a first surface including a conductive area. The first surfaces of semiconductor structures face each other. A first interconnection pillar extends from the first surface of the first semiconductor structure. A housing opens into the first surface of the second semiconductor structure. The housing is configured to receive the first interconnection pillar. A second interconnection pillar protrudes from a second surface of the second semiconductor structure which is opposite the first surface. The second interconnection pillar is in electric contact with the first interconnection pillar.


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