The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Dec. 16, 2013
Hrl Laboratories, Llc, Malibu, CA (US);
Alexandros Margomenos, Pasadena, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Dean C. Regan, Simi Valley, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
Colleen M. Butler, Camarillo, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A semiconductor device comprises one or more transistors and two or more layers of dielectric material encapsulating a front side of said one or more transistors. The gate of each of said one or more transistors is located within a cavity, or air-box, in at least one of the dielectric layers, so that the gate terminal is physically separated from said dielectric material. Such an arrangement may reduce parasitic capacitance. In another arrangement, a semiconductor device comprises one or more gallium nitride high electron mobility transistors and one or more dielectric layers encapsulating a front side of said one or more transistors, wherein the gate terminal of each of said one or more transistors is located within a cavity in at least one of the one or more dielectric layers, separated from said dielectric material.