The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Mar. 15, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Tae-Soo Kim, Seoul, KR;
Yong-Min Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
To fabricate patterns of a semiconductor device, a mask film is formed on a substrate. A plurality of first patterns and a plurality of second patterns are formed on the mask film. The plurality of first patterns is spaced apart from each other at a first distance. The plurality of second patterns is spaced apart from each other at a second distance. The second distance is different from the first distance. A spacer film is conformally formed on the plurality of first patterns and the plurality of second patterns to a predetermined thickness. The spacer film fills spaces between the plurality of second patterns. A part of the spacer film is partially removed to form a plurality of spacer film patterns are formed on side walls of the plurality of the first patterns. The plurality of first patterns and the plurality of second patterns are removed. A plurality of patterns is formed on the substrate using the plurality of spacer film as a mask.