The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Sep. 12, 2012
Applicant:

Youngnam Hwang, Hwaseong-si, KR;

Inventor:

Youngnam Hwang, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01);
Abstract

A memory device includes a selection structure disposed on a common conductive region and including an array of spaced-apart vertical semiconductor pillars electrically coupled to the common conductive region, first horizontal selection lines extending in parallel above the common conductive region and including sidewall surfaces that face sidewalls of the vertical semiconductor pillars, second horizontal selection lines extending in parallel above and transverse to the first horizontal selection lines and including sidewall surfaces that face sidewall surfaces of the vertical semiconductor pillars and at least one dielectric pattern interposed between the first horizontal selection lines and the vertical semiconductor pillars and between the second horizontal selection lines and the vertical semiconductor pillars. The memory device further includes a memory cell array disposed on the selection structure and comprising memory cells electrically coupled to the vertical semiconductor pillars.


Find Patent Forward Citations

Loading…