The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Dec. 23, 2011
Applicants:
Nobuhiko Ubahara, Tokushima, JP;
Kouichiroh Deguchi, Tokushima, JP;
Takao Yamada, Komatsujima, JP;
Inventors:
Assignee:
NICHIA CORPORATION, Anan-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/0079 (2013.01); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01);
Abstract
A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.