The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
May. 18, 2012
Applicant:
Hideaki Kuroda, Kanagawa, JP;
Inventor:
Hideaki Kuroda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 27/115 (2006.01); H01L 21/74 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 27/12 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 21/8238 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 21/74 (2013.01); H01L 21/76895 (2013.01); H01L 23/481 (2013.01); H01L 27/1203 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 21/823814 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12044 (2013.01);
Abstract
A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.