The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Aug. 01, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Tae-Yong Song, Seoul, KR;
Seung-Ho Kim, Seoul, KR;
Ja-Young Lee, Hwaseong-si, KR;
Jin-Woo Lee, Yongin-si, KR;
Hyun-Mi Ji, Daegu, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10844 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10894 (2013.01); H01L 29/66666 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/823481 (2013.01);
Abstract
Semiconductor devices are provided. The semiconductor devices may include an isolation pattern and first, second, and third active regions of a substrate. The first active region may be spaced apart from the second active region by a first width of the isolation pattern in a direction. A gate structure may be between the first and second active regions and may include a second width wider than the first width of the isolation pattern in the direction. Related methods of forming semiconductor devices are also provided.