The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Dec. 20, 2011
Applicants:
Nyles W. Cody, Tempe, AZ (US);
Shawn G. Thomas, Gilbert, AZ (US);
Pierre Tomasini, Tempe, AZ (US);
Inventors:
Assignee:
ASM America, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02661 (2013.01);
Abstract
Methods for low temperature cleaning of a semiconductor surface prior to in-situ deposition have high throughput and consume very little of the thermal budget. GeHdeposits Ge on the surface and converts any surface oxygen to GeO. An etchant, such as Clor HCl removes Ge and any GeOand epitaxial deposition follows. A spike in Ge concentration can be left on the substrate from diffusion into the substrate. All three steps can be conducted sequentially in-situ at temperatures lower than conventional bake steps.