The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Aug. 14, 2012
Applicants:
Chang Won Yang, Icheon-si, KR;
Hwang Huh, Icheon-si, KR;
Inventors:
Chang Won Yang, Icheon-si, KR;
Hwang Huh, Icheon-si, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 11/24 (2006.01); G11C 7/04 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/24 (2013.01); G11C 7/04 (2013.01); G11C 7/08 (2013.01); G11C 7/106 (2013.01); G11C 11/5642 (2013.01); G11C 16/28 (2013.01);
Abstract
A nonvolatile semiconductor memory apparatus includes a memory cell block, a plurality of page buffers, and a reference page buffer unit. The memory cell block includes a plurality of memory cell strings each of which includes a plurality of memory cells and a dummy memory cell string which includes a plurality of dummy memory cells. The page buffers sense data stored in the memory cells and apply the sensed data to an output node. The reference page buffer unit senses the dummy memory cells and adjusts the timing to apply the values sensed by the page buffers to the output node.