The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Sep. 03, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Sumiko Domae, Yokohama, JP;

Yoshihisa Iwata, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/04 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/04 (2013.01); G11C 13/0002 (2013.01); G11C 13/0038 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0076 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01);
Abstract

A control circuit, on selecting a memory cell as a selected memory cell to perform a write operation, before executing the write operation, applies a first voltage to the selected memory cell via a first line and a second line to perform a first read operation. The control circuit, when judged that a result of the first read operation does not match write data intended to be written, executes the write operation. The control circuit, when judged that a result of the first read operation matches write data intended to be written, omits a voltage application operation for the write operation. The first voltage is larger than a second voltage which is applied to the selected memory cell via the first line and the second line in a second read operation, the second read operation acting as a normal read operation for reading held data of the memory cell.


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