The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Apr. 10, 2014
Applicant:

Nanya Technology Corp., Tao-Yuan Hsien, TW;

Inventor:

Chun-Wei Wu, New Taipei, TW;

Assignee:

NANYA TECHNOLOGY CORP., Gueishan Dist., Taoyuan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/50 (2012.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 7/203 (2013.01); G03F 7/70458 (2013.01); G03F 7/70466 (2013.01); G03F 1/50 (2013.01);
Abstract

A method of forming a tight-pitched pattern. A target pattern including a plurality of first stripe patterns is provided. Each of the first stripe patterns has a first width and a first length. A photomask includes a plurality of second stripe patterns corresponding to the first stripe patterns is provided. Each of the second stripe patterns has a second width and a second length. A first exposure process with the photomask is provided in an exposure system. The first exposure process uses a first light source with a higher resolution that is capable of resolving the second width of each of the second stripe patterns. Finally, a second exposure process with the photo-mask is provided in the exposure system. The second exposure process uses a second light source with a lower resolution that is not adequate to resolve the second width of each of the second stripe patterns.


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