The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Mar. 30, 2009
Applicants:

Richard Andrew Hogg, Sheffield, GB;

David Timothy Dylan Childs, Sheffield, GB;

Benjamin James Stevens, Sheffield, GB;

Kristian Michael Groom, Sheffield, GB;

Inventors:

Richard Andrew Hogg, Sheffield, GB;

David Timothy Dylan Childs, Sheffield, GB;

Benjamin James Stevens, Sheffield, GB;

Kristian Michael Groom, Sheffield, GB;

Assignee:

Finisar UK Limited, Sedgefield, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/13 (2006.01); H01S 5/0625 (2006.01); B82Y 20/00 (2011.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0625 (2013.01); B82Y 20/00 (2013.01); H01S 5/06251 (2013.01); H01S 5/3412 (2013.01);
Abstract

A multisection quantum dot laser () comprising at least first () and second () sections, each section () comprising a semiconductor substrate () comprising p () and n type () layers and a quantum dot layer sandwiched therebetween; the semiconductor substrate () comprising a back electrical contact in electrical contact with one of the p and n type layers and a tuning electrical contact () in electrical contact with the other of the p and n type layers; the quantum-dot layers of the first () and second () sections being portions of the same quantum dot layer () forming a laser cavity.


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