The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Oct. 17, 2013
Applicant:

Princeton University, Princeton, NJ (US);

Inventors:

Mei Chai Zheng, Princeton, NJ (US);

Qiang Liu, Zurich, CH;

Claire F. Gmachl, Princeton, NJ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/06 (2006.01); H01S 5/34 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01S 5/06 (2013.01); H01S 5/3401 (2013.01); B82Y 20/00 (2013.01); Y10S 977/951 (2013.01);
Abstract

In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.


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