The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Aug. 29, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

Inventors:

Dong-Hoon Lee, Seoul, KR;

Geon-Wook Yoo, Seongnam-Si, KR;

Nam-Goo Cha, Ansan-Si, KR;

Kyung-Wook Hwang, Hwaseong-Si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 27/15 (2006.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 33/46 (2010.01); B82Y 20/00 (2011.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 27/15 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01); H01L 33/46 (2013.01); B82Y 20/00 (2013.01); H01L 33/08 (2013.01); Y10S 977/762 (2013.01); Y10S 977/949 (2013.01); Y10S 977/95 (2013.01);
Abstract

A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.


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