The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jun. 10, 2014
Applicant:
Lg Innotek Co., Ltd, Seoul, KR;
Inventors:
Yong Tae Moon, Seoul, KR;
Hyun Chul Lim, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0008 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01);
Abstract
A light emitting device includes a first conductive semiconductor layer (), an active layer () including a quantum well () and a quantum barrier () on the first conductive semiconductor layer (). An undoped last barrier layer () is provided on the active layer (), and an AlInGaN (0≦x≦1, 0≦y≦1)-based layer () is provided on the undoped last barrier layer (). A second conductive semiconductor layer () is provided on the AlInGaN-based layer ().