The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jan. 20, 2015
Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof
Applicants:
Pengfei Wang, Shanghai, CN;
Xi Lin, Shanghai, CN;
Wei Wang, Shanghai, CN;
Xiaoyong Liu, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Inventors:
Pengfei Wang, Shanghai, CN;
Xi Lin, Shanghai, CN;
Wei Wang, Shanghai, CN;
Xiaoyong Liu, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Assignee:
Fudan University, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 31/111 (2006.01); H01L 31/0232 (2014.01); H01L 27/24 (2006.01); H01L 31/18 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 27/2454 (2013.01); H01L 27/304 (2013.01); H01L 31/02327 (2013.01); H01L 31/113 (2013.01);
Abstract
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.