The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Feb. 22, 2012
Stefan Jost, Munich, DE;
Jorg Palm, Munich, DE;
Stefan Jost, Munich, DE;
Jorg Palm, Munich, DE;
SAINT-GOBAIN GLASS FRANCE, Courbevoie, FR;
Abstract
A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type CuZnSn(S,Se)is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor CuZnSn(S,Se)on a body is described.