The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Sep. 28, 2012
Applicants:

Jinlin YE, Eastvale, CA (US);

Shirong Liao, Eastvale, CA (US);

BO Liao, Chongqing, CN;

Jie Dong, Chongqing, CN;

Inventors:

Jinlin Ye, Eastvale, CA (US);

Shirong Liao, Eastvale, CA (US);

Bo Liao, Chongqing, CN;

Jie Dong, Chongqing, CN;

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 31/1804 (2013.01); H01L 31/184 (2013.01); H01L 21/223 (2013.01); H01L 21/2233 (2013.01); Y02E 10/544 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate.


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