The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Oct. 26, 2012
Epistar Corporation, Hsinchu, TW;
Yu-Yao Lin, Hsinchu, TW;
Yen-Chih Chen, Hsinchu, TW;
Chien-Yuan Tseng, Hsinchu, TW;
Tsun-Kai Ko, Hsinchu, TW;
Chun-Ta Yu, Hsinchu, TW;
Shih-Chun Ling, Hsinchu, TW;
Cheng-Hsiung Yen, Hsinchu, TW;
Hsin-Hsien Wu, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.