The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jun. 05, 2009
Howard W. H. Lee, Saratoga, CA (US);
Howard W. H. Lee, Saratoga, CA (US);
Stion Corporation, San Jose, CA (US);
Abstract
A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. Additionally, the method includes forming a copper indium material comprising an atomic ratio of Cu:In ranging from about 1.35:1 to about 1.60:1 by at least sputtering a target comprising an indium copper material. The method further includes subjecting the copper indium material to thermal treatment process in an environment containing a sulfur bearing species. Furthermore, the method includes forming a copper indium disulfide material from at least the thermal treatment process of the copper indium material and maintaining an interface region between the copper indium disulfide material and electrode substantially free from a metal disulfide layer, which has different semiconductor characteristics from the copper indium disulfide material. Moreover, the method includes forming a window layer overlying the copper indium disulfide material.