The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jul. 23, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Tae Hun Kim, Gyeonggi-do, KR;
Sung Joon Kim, Gyeonggi-do, KR;
Yong Il Kim, Gyeonggi-do, KR;
Yung Ho Ryu, Gyeonggi-do, KR;
Myeong Rak Son, Gyeonggi-do, KR;
Su Yeol Lee, Gyeonggi-do, KR;
Seung Hwan Lee, Gyeonggi-do, KR;
Tae Sung Jang, Gyeonggi-do, KR;
Su Min Hwangbo, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.