The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Oct. 26, 2012
Applicant:
Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Inventors:
Cheng-Kuo Lin, Tao Yuan Shien, TW;
Szu-Ju Li, Tao Yuan Shien, TW;
Rong-Hao Syu, Tao Yuan Shien, TW;
Shu-Hsiao Tsai, Tao Yuan Shien, TW;
Assignee:
WIN SMICONDUTOR CORP., Kuei Shan Hsiang, Tao Yuan Shen, TC;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8252 (2006.01); H01L 29/205 (2006.01); H01L 27/06 (2006.01); H01L 29/737 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 27/0623 (2013.01); H01L 29/205 (2013.01); H01L 29/7371 (2013.01); H01L 29/87 (2013.01);
Abstract
A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor.