The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Sep. 10, 2012
Applicants:
Chiaki Kudou, Hyogo, JP;
Tsutomu Kiyosawa, Hyogo, JP;
Inventors:
Chiaki Kudou, Hyogo, JP;
Tsutomu Kiyosawa, Hyogo, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0634 (2013.01); H01L 29/0847 (2013.01); H01L 29/0856 (2013.01); H01L 29/42376 (2013.01); H01L 29/66068 (2013.01); H01L 29/66666 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7828 (2013.01); H01L 21/0445 (2013.01); H01L 21/0475 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01);
Abstract
A first first-conductivity-type impurity region () is provided in an upper portion of a semiconductor layer () around a trench (). A gate electrode () is provided on a sidewall surface of the trench (), and on the semiconductor layer () around the trench () with a gate insulating film () interposed therebetween. A second-conductivity-type impurity region () and a second first-conductivity-type impurity region () are interposed between a portion of the gate electrode () around the trench () and the first first-conductivity-type impurity region () sequentially on the first first-conductivity-type impurity region ().