The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jan. 28, 2011
Yasuhiko Onishi, Matsumoto, JP;
Mutsumi Kitamura, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Manabu Takei, Matsumoto, JP;
Yasuhiko Onishi, Matsumoto, JP;
Mutsumi Kitamura, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Manabu Takei, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., , JP;
Abstract
A parallel p-n layer () is provided as a drift layer between an active portion and an ndrain region (). The parallel p-n layer () is formed by an n-type region () and a p-type region () being repeatedly alternately joined. An n-type high concentration region () is provided on a first main surface side of the n-type region (). The n-type high concentration region () has an impurity concentration higher than that of an n-type low concentration region () provided on a second main surface side of the n-type region (). The n-type high concentration region () has an impurity concentration 1.2 times or more, 3 times or less, preferably 1.5 times or more, 2.5 times or less, greater than that of the n-type low concentration region (). Also, the n-type high concentration region () has one-third or less, preferably one-eighth or more, one-fourth or less, of the thickness of a region of the n-type region () adjacent to the p-type region ().