The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Aug. 20, 2010
Ken Sato, Saitama, JP;
Ken Sato, Saitama, JP;
Sanken Electric Co., LTD., Niiza-shi, Saitama, JP;
Abstract
A semiconductor device comprising: an active layer, which has a composition represented by the formula: AlMGaN, wherein x satisfies 0≦x≦1, wherein y satisfies 0≦y≦1, wherein x+y satisfies 0≦x+y≦1, and wherein M contains at least one of In and B; a substrate containing GaN; and a buffer layer provided between the active layer and the substrate, wherein the semiconductor device is operated by electrical current flowing through the active layer in a direction parallel to a face of the substrate, wherein the buffer layer has a composition represented by the formula: AlInN, wherein p satisfies 0≦p<1, and wherein the buffer layer, which has a band gap energy wider than that of the substrate, and which is lattice-matched to the substrate.