The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Jun. 07, 2011
Applicants:

Akira Nakajima, Tsukuba, JP;

Sankara Narayanan Ekkanath Madathil, Leicester, GB;

Inventors:
Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 27/095 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7782 (2013.01); H01L 27/095 (2013.01); H01L 29/1029 (2013.01); H01L 29/42316 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/782 (2013.01); H01L 29/2003 (2013.01);
Abstract

A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.


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