The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Feb. 25, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Masashi Yanagita, Kanagawa, JP;
Shigeru Kanematsu, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/4234 (2013.01); H01L 29/4238 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device includes: a device region having a semiconductor layer that includes a channel section; a device peripheral region adjoining the device region; a gate electrode provided within the device region, and having a boundary section that spans the device region and the device peripheral region; a conductive layer provided between the gate electrode and the semiconductor layer; and an insulating layer provided between the gate electrode in the boundary section and the semiconductor layer.