The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9087880 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 21, 2015

Filed:

Jul. 11, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

DaSheng Fang, Shanghai, CN;

Yuan Quan, Shanghai, CN;

Xiaoxia Wang, Shanghai, CN;

Liang Ying Zeng, Shanghai, CN;

Jingyang Zhang, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 23/49827 (2013.01);
Abstract

The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. With the technical solution according to embodiments of the invention, undesirable influences due to metal FILLs will be eliminated.


Find Patent Forward Citations

Fang, DaSheng. (2015). Removing metal fills in a wiring layer (U.S. Patent No. 9087880). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9087880

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