The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Aug. 27, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Manabu Takakuwa, Mie-ken, JP;

Masaki Hirano, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/027 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); B81C 1/00031 (2013.01); H01L 21/0271 (2013.01); H01L 21/76816 (2013.01); B81C 2201/0149 (2013.01);
Abstract

According to one embodiment, a pattern formation method includes forming a first mask layer including a first and a second concave pattern on a first surface of a substrate. The method can include providing a protection film in the first concave pattern. The method can include providing a self-assembling material in the second concave pattern. The method can include forming a first and a second phase in the second concave pattern by phase-separating the self-assembling material. The method can include removing the protection film together with the first phase to form a second mask layer having the first concave pattern and a third concave pattern. The third concave pattern is provided in the second concave pattern, and has an opening width narrower than an opening width of the second concave pattern. The method can include processing the substrate using the second mask layer as a mask.


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