The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jul. 15, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seung-Han Yoo, Seongnam-si, KR;
Dong-Kyu Lee, Hwaseong-si, KR;
Abstract
Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern.