The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Sep. 05, 2014
Imec Vzw, Leuven, BE;
Shih-Hung Chen, Leuven, BE;
Dimitri Linten, Boortmeerbeek, BE;
IMEC VZW, Leuven, BE;
Abstract
The disclosed technology generally relates to electrostatic discharge protection devices that protect circuits from transient electrical events and more particularly to low-voltage triggered silicon-controlled rectifier devices implemented using a bulk fin field-effect transistor technology. In one aspect, an electrostatic discharge protection device comprises a low-voltage triggered silicon-controlled rectifier having an embedded grounded-gate n-channel metal oxide semiconductor structure implemented as a bulk fin field-effect transistor having a plurality of fin structures. The fin structures direct current from an avalanche zone to a gate formed over the fin structure. The electrostatic discharge protection device has a higher trigger current and a lower leakage current than a similar device having a planar embedded grounded-gate n-channel metal oxide semiconductor structure because the current flow is restricted by the fin structures.