The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Nov. 29, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Baik-woo Lee, Gwangmyeong-si, KR;
Seong-woon Booh, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 23/498 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49844 (2013.01); H01L 23/3735 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 24/45 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 24/92 (2013.01); H01L 29/2003 (2013.01); H01L 29/7393 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03436 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0517 (2013.01); H01L 2224/0518 (2013.01); H01L 2224/05109 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05113 (2013.01); H01L 2224/05116 (2013.01); H01L 2224/05117 (2013.01); H01L 2224/05118 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05138 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05149 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05163 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05173 (2013.01); H01L 2224/05176 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05183 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29113 (2013.01); H01L 2224/29116 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29347 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/8584 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85801 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13033 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure.