The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Feb. 15, 2012
Chao-jung Chen, Hsinchu, TW;
I-hsuan Chiang, Hsinchu, TW;
Chao-Jung Chen, Hsinchu, TW;
I-Hsuan Chiang, Hsinchu, TW;
E INK HOLDINGS INC., Hsinchu, TW;
Abstract
A thin film transistor structure includes a substrate, a gate layer, a gate insulator layer, a first semiconductor island, a second semiconductor island and a source and drain layer. The gate layer is disposed on the substrate, and includes a first gate electrode and a second electrode electrically connected to the first gate electrode. The gate insulator layer is disposed on the substrate and covers the first and second gate electrodes. The first semiconductor island is disposed on the gate insulator layer and corresponding to the first gate electrode. The second semiconductor island is disposed on the gate insulator layer and corresponding to the second electrode. The source and drain layer is disposed on the gate insulator layer and next to the first semiconductor island and the second semiconductor island. A display device using the above thin film transistor structure is also provided.