The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Dec. 27, 2012
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/308 (2006.01); H01L 21/04 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 21/0337 (2013.01); H01L 21/04 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 29/66545 (2013.01); H01L 29/66825 (2013.01); H01L 27/11582 (2013.01); H01L 28/90 (2013.01);
Abstract
Methods of manufacturing a semiconductor device are provided. The method may include forming an etch target layer on a substrate, forming a carbon layer doped with boron on the etch target layer, a top end portion of the carbon layer having a different boron concentration from a bottom end portion of the carbon layer, patterning the carbon layer to form at least one opening exposing the etch target layer, and etching the exposed etch target layer using the carbon layer as an etch mask.