The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Dec. 20, 2011
Applicants:

Takeshi Hara, Osaka, JP;

Hirohiko Nishiki, Osaka, JP;

Hisao Ochi, Osaka, JP;

Tetsuya Aita, Osaka, JP;

Tohru Okabe, Osaka, JP;

Yuya Nakano, Osaka, JP;

Inventors:

Takeshi Hara, Osaka, JP;

Hirohiko Nishiki, Osaka, JP;

Hisao Ochi, Osaka, JP;

Tetsuya Aita, Osaka, JP;

Tohru Okabe, Osaka, JP;

Yuya Nakano, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 27/124 (2013.01); H01L 27/1296 (2013.01); H01L 29/4908 (2013.01); H01L 29/78696 (2013.01); G02F 2001/13629 (2013.01); H01L 29/458 (2013.01);
Abstract

An active matrix substrate () includes a gate electrode () formed on an insulating substrate (), and a planarizing film () formed on the gate electrode () and made of a baked SOG material. The gate electrode () is a multilayer film including a first conductive film () formed on the insulating substrate () and made of a metal except copper, a second conductive film () formed on the first conductive film () and made of copper, and a third conductive film () formed on the second conductive film () and made of the metal except copper.


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