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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9087711 B1

PDFFull Text
Date of Patent:
Jul. 21, 2015

Filed:

Mar. 15, 2013

Pattern structure and method of forming the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yoon Moon Park, Seoul, KR;

Jae Hwang Sim, Seoul, KR;

Keon Soo Kim, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Khiem D Nguyen

Assistant Examiner:

Wilner Jean Baptiste

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 23/52 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 27/0207 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11529 (2013.01);
Abstract

A pattern structure for a semiconductor device includes a plurality of first patterns, each of the first patterns extending in a first direction in the shape of a line, neighboring first patterns being spaced apart from each other by a gap distance, the plurality of first patterns including a plurality of trenches in parallel with the line shapes, respective trenches being between neighboring first patterns, the plurality of trenches including long trenches and short trenches alternately arranged in a second direction substantially perpendicular to the first direction, and at least a second pattern, the second pattern being coplanar with the first pattern, end portions of the first patterns being connected to the second pattern.

Find Patent Forward Citations

Park, Yoon. (2015). Pattern structure and method of forming the same (U.S. Patent No. 9087711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9087711

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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