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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9087696 B1

PDFFull Text
Expired
Date of Patent:
Jul. 21, 2015

Filed:

Nov. 02, 2010

Systems and methods for non-periodic pulse partial melt film processing

Applicants:

James S. Im, New York, NY (US);

Yikang Deng, New York, NY (US);

Qiongying HU, New York, NY (US);

Ui-jin Chung, Rego Park, NY (US);

Alexander B. Limanov, Millburn, NJ (US);

Inventors:

James S. Im, New York, NY (US);

Yikang Deng, New York, NY (US);

Qiongying Hu, New York, NY (US);

Ui-Jin Chung, Rego Park, NY (US);

Alexander B. Limanov, Millburn, NJ (US);

Assignee:

THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK, New York, NY (US);

Attorneys:

Wilmer Cutler Pickering

Hale and Dorr LLP

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 21/67 (2006.01); H01L 29/786 (2006.01); B23K 26/00 (2014.01); H01L 21/268 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02686 (2013.01); B23K 26/0081 (2013.01); H01L 21/0268 (2013.01); H01L 21/02691 (2013.01); H01L 21/268 (2013.01); H01L 21/67115 (2013.01); H01L 27/1285 (2013.01); H01L 27/1296 (2013.01); H01L 29/04 (2013.01); H01L 29/78678 (2013.01); B23K 2201/40 (2013.01); H01L 21/02532 (2013.01);
Abstract

In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.

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