The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

May. 30, 2013
Applicants:

Douglas Arthur Hutchings, Elkins, AR (US);

Seth Daniel Shumate, Fayetteville, AR (US);

Hameed Naseem, Fayetteville, AR (US);

Inventors:

Douglas Arthur Hutchings, Elkins, AR (US);

Seth Daniel Shumate, Fayetteville, AR (US);

Hameed Naseem, Fayetteville, AR (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02612 (2013.01); H01L 21/0245 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/02658 (2013.01); H01L 21/02664 (2013.01); H01L 21/02672 (2013.01); H01L 29/04 (2013.01);
Abstract

A seed layer structure is annealed. The seed layer structure comprises a crystallization catalyst material on a seed semiconductor over a substrate. The seed semiconductor comprises an amorphous portion. Annealing of the seed layer structure converts the amorphous portion into a crystalline portion. The crystalline portion is connected to the substrate by subsurface crystal legs. The crystallization catalyst material formed underneath the crystalline portion by annealing is removed from the underneath of the crystalline portion.


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